transistor (npn) features z high dc current gain. z complimentary to 2sb624 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 700 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =30v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v , i c =0 0.1 a h fe(1) * v ce = 1v, i c = 100ma 110 400 dc current gain h fe(2) * v ce =1v, i c = 700ma 50 collector-emitter saturation voltage v ce(sat) * i c =700ma, i b =70ma 0.6 v base-emitter voltage v be * v ce =6v, i c =10ma 0.6 0.7 v transition frequency f t v ce =6v, i c = 10ma 170 mhz collector output capacitance cob v cb =6v,i e =0,f=10mh z 12 pf * pulse test : pulse width 350 s,duty cycle 2%. classification of h fe (1) marking dv1 dv2 dv3 dv4 dv5 range 110-180 135-220 170-270 200-320 250-400 sot-23 1.base 2.emitter 3.collector 2SD596 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu
3 www.htsemi.com semiconductor jinyu
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